Research Center for Carbon-based Electronics

Research Center for Carbon-based Electronics of Peking University is a university-level research center established by Peking University for the development of future carbon nanotube electronics. The Center is a physical research and development institution, and was officially approved in 2019.

Institutional Positioning

Research Center for Carbon-based Electronics is dedicated to support the double first-class "carbon-based electronics" research direction of Peking University. To become a source of original innovation in carbon-based devices and integrated circuit technology, and the leader of carbon-based integrated circuit industrialization. Develop a complete industrial ecological chain of carbon-based integrated circuits.

Development Objectives

It aims to develope new nanoelectronics devices and their integrated circuit technology, develope and improve the standardized process of carbon nanotube integrated circuits. Utilizing the experience and technology accumulated in the development of silicon-based microelectronics for more than half a century. Solving the key technical problems facing the industrialization of carbon-based integrated circuits and cultivating high-end talents in carbon-based electronics. To establish a carbon-based integrated circuit research center with international leading level. To accelerate the industrialization of carbon-based integrated circuits and spawn a complete carbon-based integrated circuit industry chain.

Research Achievements

After nearly twenty years of diligent work, with the joint efforts of the Ministry of Science and Technology, Beijing Science and Technology Commission, National Natural Science Foundation of China and Peking University. The team has made a series of breakthroughs in the research of materials and preparation processes related to carbon-based electronic devices, which include undoped CMOS technology, sub-10 nm gate length CMOS devices, ultra-low power Dirac source carbon-based transistor devices, wafer-level preparation technology of carbon nanotube CMOS transistors, carbon tube light-emitting diodes and photodiodes, carbon tube photovoltaic multiplier effect, and wafer-level high-purity semiconductor carbon nanotube array thin film technology. Basically, the challenges of carbon tube materials and devices given by ITRS have been solved, and have laid the foundation for advancing the practical development of carbon-based integrated circuits.

Please refer to our website (http://cbic.pku.edu.cn/index.htm) for more information.