Wang, Xingjun is a professor in the School of Electronics. He obtained his B.E., M.E. and Ph.D. degrees from the Dalian University of Technology, China in 1999, 2002 and 2005, respectively. From 2007 to 2009, he was a JSPS postdoctoral follow in Department of Electronic Engineering, University of Electro-Communications, Japan. In 2009, he joined Peking University, and is currently a full professor at Peking University. His research interests include the Si based light source and Si optoelectronic integration chip for high speed optical communication.

In the past five years, Dr. Wang has published more than 60 papers in international journals such as Nature, Nature Photonics, Nature Communication and etc.; published more than 20 conference papers in top-tire conferences include OFC, CLEO and etc.; gave more than 50 invited talks in OFC, CLEO, OECC, ACP and other international conferences. The citation reaches 2500 times. Prof. Wang granted more thn 30 invention patents. Now he is the lead guest editor for a special issue of Micro/Nano photonics in Advances in Condensed Matter Physics. In 2013, he was selected New Century Excellent Talents by Ministry of Education, China, In 2015, he was selected first YoungChang Jiang Scholarby Ministry of Education.

Dr. Wang has more than ten research projects including NSFC, 973 programs, 863 project, etc. His research achievements are summarized as follows:

1) Silicon based light source: High efficient Er silicate light materials and high gain optical amplifier (3 Appl. Phys. Lett, 1 Opt. Lett. 1 J. Appl. Lett. 1 IEEE Photo. Tech. Lett.) Electrical pump Er silicate light emission diode (2 J. Appl. Lett. 3 Opt. Mater).

2) Silicon based integrated photonics chips for high speed optical communications, the minimum phase deviation 90 degree silicon hybrid based on wedge-shaped waveguide structure (Opt. Express, and ACP conferenc post-deadline). The most efficient modulation Silicon MZI modulator and BPSK, QPSK phase modulator (3 Opt.Express). The successful implementation of active and passive optoelectronic devices integration, including 1D grating, 2D grating, modulators, detectors, mixers, and polarization beam splitter/combiners. Realize silicon 100 Gb/s transmission rate based on Si integrated transmission and receiving chip. (1 JJAP and 5 international conference invited talks)