Huang, Shaoyun is an associate professor in the Beijing key laboratory of quantum devices, the Key Laboratory for the Physics and Chemistry of Nanodevices and School of Electronics. He obtained his B.Sc. and M.Sc. degrees in physics from Nanjing University in September 1997 and 2000, respectively, and his Ph.D. degree in physical electronics from Tokyo Institute of Technology in September 2003. His research interests include quantum dot spin qubits, quantum computations, semiconductor low dimensional material based quantum devices.

Dr. Huang has authorized more than 40 research papers on Science, Nature Nanotechnology, Nano Letter, Applied Physics Letters etc. He was invited to write two review articles on handbooks of ASP and Willey. He obtained two Chinese patents. He is serving as an Editorial Board Member of IOP Journal of Semiconductors and as a visiting researcher of Riken, Japan. Dr. Huang served as the vice secretary in general to help organizing the 33rd International Conference on the Physics of Semiconductors (ICPS2016).

Dr. Huang has more than 5 research projects including NSFC, 973 programs etc. His research achievements are summarized as follows:

1) Semiconductor nanowire quantum dots: highly tunable single quantum dot (QD) as well as linear double and triple QD devices are realized in a single-crystalline pure-phase InAs nanowire using a local finger gate technique. We demonstrate direct measurements of the spin-orbit interaction and Landé g factors in the double QD in the Pauli spin-blockade regime. In the triple QD, we demonstrate that an energetically degenerated quadruple point can be built by moving two separated triple points together via sophistically tuning of energy levels in the three QDs. We also demonstrate the achievement of direct coherent electron transfer between two remote QDs in the triple QDs, realizing a long-distance coherent quantum bus operation. These results imply that single-crystal pure-phase InAs nanowires are desired semiconductor nanostructures for applications in quantum information processing technologies.

2) Topological insulator nanostructures: Weak antilocalization and electron-electron interaction effects are observed and analyzed in a topological insulator Bi₂Se₃thin film at low temperatures. The transport in the film is shown to occur via coupled multiple (topological surface and bulk states) channels and the electron-electron interaction plays a dominant role in quantum corrections to the conductivity of the film at low temperatures. We report on the successful realization of single-electron Coulomb blockaded devices in Bi₂Te₃nanoplates to address the question that how the electron transport properties evolve when a 3D topological insulator becomes confined in all three dimensions. The confined spin-momentum inter-locked topological states may allow a vast of new physical phenomena to emerge.

3) All-around gate semiconductor nanowire FET: Gate-all-around field-effect transistors are realized with thin, single-crystalline, pure-phase InAs nanowires. At room temperature, the transistors show a desired high on-state currentI_onof ~10 μA and an on-off current ratioI_on/I_offof as high as 10⁶at source-drain bias voltage of 50 mV. The field-effect mobility in the nanowire channels is found to be ~1500 cm²/Vs at room temperature. We also fabricate a wrap gate-all-around field-effect transistor with a 15-nm-diameter InSb nanowire and realize a low off-current ~6 pA atV_ds=1 mV and a largeI_on/I_offup to ~300 at room temperature. The excellent performance of the transistors is explained in terms of strong electrostatic and quantum confinements of carriers in the nanowires.