Research Assistant Professor
Research Center for Carbon-based Electronics
Research Area: Amorphous oxide semiconductors based electronics
Email: qlhu[at]pku.edu.cn
Selected Publications:
[1] Q. Hu, et al., True nonvolatile high-speed DRAM cells using tailored ultrathin IGZO. Advanced Materials, 2023, 35(20): 2210554.
[2] Q. Hu, et al., Ultrashort 15-nm flexible radio frequency ITO transistors enduring mechanical and temperarure stress. Science Advances, 2022, 8(51): eade4075.
[3] Q. Hu, et al., Optimized IGZO FETs for capacitorless DRAM with retention of 10 ks at RT and 7 ks at 85 oC at zero Vhold with sub-10 ns speed and 3 bit operation. IEEE International Electron Devices Meeting (IEDM), 2022, 26.6.1-26.6.4.
[4] Q. Hu, et al., First demonstration of top-gate indium-tin-oxide RF transistors with record high cut-off frequency of 48 GHz, Id of 2.32 mA/mm and gm of 900 mS/mm on SiC substrate with superior reliability at 85 oC. IEEE International Electron Devices Meeting (IEDM), 2023, 39.6.1-39.6.4.
[5] Q. Hu, et al., Capacitorless DRAM cells based on high-performance indium-tin-oxide transistors with record data retention and reduced write latency. IEEE Electron Device Letters, 2023, 44(1): 60-63.
[6] Q. Hu, et al., High-stability flexible radio frequency transistor and mixer based on ultrathin indium tin oxide channel. Applied Physics Letters, 2022, 121(24): 242101.
[7] Q. Hu, et al., Channel engineering of normally-off AlGaN/GaN MOS-HEMTs by atomic layer etching and high-k dielectric. IEEE Electron Device Letters, 2018, 39(9): 1377-1380.
[8] Q. Hu, et al., Improved current collapse in recessed AlGaN/GaN MOS-HEMTs by interface and structure engineering. IEEE Transactions on Electron Devices, 2019, 66(11): 4591-4596.
[9] Q. Hu, et al., Improved low-frequency noise in recessed-gate E-mode AlGaN/GaN MOS-HEMTs under electrical and thermal stress. IEEE Journal of the Electron Device Society, 2021, 9: 511-516.
[10] C. Gu, Q. Hu*, et al., High-performance short channel top-gate indium-tin-oxide transistors by optimized gate dielectric. IEEE Electron Device Letters, 2023, 44(5): 837-840.
